msa-1105 cascadable silicon bipolar mmic amplifer data sheet features ? high dynamic range cascadable 50 or 75 gain block ? 3 db bandwidth: 50 mhz to 1.3 ghz ? 17.5 dbm typical p 1 db at 0.5 ghz ? 3.6 db typical noise figure at 0.5 ghz ? surface mount plastic package ? tape-and-reel packaging option available ? lead-free option available 05 plastic package description the msa-1105 is a high performance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a low cost, surface mount plastic package. this mmic is designed for high dynamic range in either 50 or 75 systems by combining low noise fgure with high ip 3 . typical applications include narrow and broadband linear amplifers in commercial and industrial systems. the msa-series is fabricated using avagos 10 ghz f t , 25 ghz f max silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias fexibility. typical biasing confguration c block c block r bias v cc > 8 v v d = 5.5 v rfc (optional) in ou t msa 4 1 2 3
msa-1105 absolute maximum ratings parameter absolute maximum [1] device current 80 ma power dissipation [,3] 550 mw rf input power +13 dbm junction temperature 150c storage temperature C65 to 150c thermal resistance [2] : jc = 15c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25c. 3. derate at 8 mw/c for t c > 124c. g p power gain (|s 1 | ) f = 0.05 ghz db 1.7 f = 0.5 ghz db 10.0 1.0 f = 1.0 ghz db 10.5 ? g p gain flatness f = 0.1 to 1.0 ghz db 1.0 f 3 db 3 db bandwidth [] ghz 1.3 input vswr f = 0.1 to 1.0 ghz 1.5:1 output vswr f = 0.1 to 1.0 ghz 1.7:1 nf 50 noise figure f = 0.5 ghz db 3.6 p 1 db output power at 1 db gain compression f = 0.5 ghz dbm 17.5 ip 3 third order intercept point f = 0.5 ghz dbm 30.0 t d group delay f = 0.5 ghz psec 00 v d device voltage v 4.4 5.5 6.6 dv/dt device voltage temperature coefcient mv/c C8.0 notes: 1. the recommended operating current range for this device is 40 to 70 ma. typical performance as a function of current is on the following page. 2. referenced from 50 mhz gain (gp). electrical specifcations [1] , t a = 25c symbol parameters and test conditions: i d = 60 ma, z o = 50 units min. typ. max. vswr ordering information part numbers no. of devices comments msa-1105-str 10 bulk MSA-1105-STRG 100 bulk msa-1105-tr1 500 7" reel msa-1105-tr1g 500 7" reel msa-1105-tr 1500 13" reel msa-1105-tr g 1500 13" reel note: order part number with a g sufx if lead-free option is desired.
3 msa-1105 typical scattering parameters (z o = 50 , t a = 25c, i d = 60 ma) freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang k .0005 .80 C17 19.0 8.94 171 C6.0 .050 51 .81 C16 0.53 .005 .6 C6 13.9 4.98 163 C16.8 .144 15 .6 C64 0.93 .05 .07 C48 1.8 4.36 174 C16.4 .151 4 .08 C5 1.08 .050 .06 C38 1.7 4.33 174 C16.3 .153 .06 C48 1.08 .100 .05 C41 1.7 4.31 170 C16.4 .15 3 .06 C5 1.09 .00 .06 C58 1.6 4.6 16 C16. .155 5 .08 C73 1.08 .300 .07 C74 1.4 4.19 154 C16.1 .157 7 .10 C91 1.07 .400 .09 C91 1. 4.10 146 C15.8 .163 8 .1 C105 1.06 .500 .10 C105 1.0 4.00 138 C15.6 .166 8 .14 C116 1.05 .600 .11 C116 11.8 3.88 131 C15.4 .171 10 .17 C16 1.04 .700 .13 C18 11.5 3.76 13 C15.0 .178 11 .18 C135 1.03 .800 .15 C136 11. 3.63 116 C14.7 .184 11 .1 C144 1.01 .900 .16 C145 10.9 3.49 109 C15.5 .188 11 . C151 1.01 1.000 .18 C15 10.5 3.37 10 C14.1 .197 11 .4 C159 1.00 1.500 .8 174 8.8 .75 7 C13. .19 7 .31 170 1.00 .000 .38 150 7.1 .8 48 C1.1 .48 0 .34 151 0.99 .500 .46 133 5.6 1.90 8 C11.9 .54 C4 .38 134 1.0 3.000 .53 118 4. 1.6 11 C11.6 .6 C8 .40 1 1.04 typical performance, t a = 25c, z o = 50 (unless otherwise noted) g p (db) 0.1 .02 .05 0.5 1.0 2.0 3.0 frequency (ghz) figure 1. typical power gain vs. frequency, i d = 60 ma. 0 2 4 6 8 10 14 12 16 figure 3. output power at 1 db gain compression, noise figure and power gain vs. case temperature, f = 0.5 ghz, i d = 60 ma. 3 4 5 11 13 12 16 17 18 ?25 +25 +85 p 1 db (dbm) nf (db) gp (db) temperature (c) g p p 1 db nf 2 0 4 6 8 v d (v) figure 2. device current vs. voltage. 0 20 40 60 100 80 i d (ma) t c = +85c t c = +25c t c = ?25c frequency (ghz) figure 4. output power at 1 db gain compression vs. frequency. frequency (ghz) figure 5. noise figure vs. frequency. 3.5 3.0 4.0 4.5 5.5 5.0 nf (db) 0.1 0.2 0.3 0.5 2.0 1.0 0.1 0.2 0.3 0.5 2.0 1.0 12 14 16 18 22 20 p 1 db (dbm) i d = 70 ma i d = 60 ma i d = 40 ma z o = 50 z o = 75 i d = 70 ma i d = 60 ma i d = 40 ma
05 plastic package dimensions 4 a 0.030 0.89 0.100 0.010 2.54 0.25 0.135 0.015 3.42 0.25 (4 plcs) 1 3 2 0.008 0.002 0.20 0.05 0.0005 0.010 (0.013 0.25) 0.050 1.27 gr ound rf input rf output and dc bias gr ound 0.030 0.76 0.030 0.76 0.145 3.68 0.020 0.51 dia 0.030 0.010 0.76 0.25 (4 plcs) notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countries. data subject to change. copyright ? 008 avago technologies, limited. all rights reserved. obsoletes 5989-746en av0 -13 en - may 15, 008
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